OKI provides exhaust gas treatment equipment to ON Semiconductor's European plant, which can not only complete the exhaust gas treatment of the atmospheric pressure CVD film production process but also ensure the stability of the film production, and support the environmental protection of the customer's production process.

OKI reported that OKI Engineering Co., Ltd. (OKI), which provides reliability assessment and environmental protection technical services (President: Asai Yu, Head Office: Nerima Ward, Tokyo, Japan, hereinafter referred to as "OEG" ") Supply of atmospheric pressure CVD ※ 1 exhaust treatment equipment for production equipment" KGT-3MM- "to the European factory of semiconductor manufacturer ON Semiconductor (President: Keith Jackson, head office: Phoenix, Arizona, USA) AP ". The equipment can not only deal with the hazards of special gases used in atmospheric CVD production equipment, but also control the exhaust gas to maintain a certain pressure, ensure the stable production of CVD film production lines, and contribute to environmental protection in the production process of customers.

Exhaust gas treatment equipment "KGT-3MM-AP"
Figure exhaust treatment equipment "KGT-3MM-AP"

Atmospheric pressure CVD production equipment is indispensable for the production of semiconductor insulating films such as Power FET * 2 and IGBT * 3. However, the production equipment uses SiH4 * 5, PH3 * 6, B2H6 * 7 and other harmful gases, so it must be exhausted. OEG's exhaust gas treatment equipment "KGT-3MM-AP" uses a wet treatment method, which can efficiently process the special gases and powders used in the CVD film formation process. The special stainless steel filter is used inside the equipment, which not only improves the treatment capacity of harmful gases, but also is not prone to blockage in structure, so it can be operated for a long time without maintenance. In addition, the internal filter adopts a special structure, which is easy to clean and reduces the burden of equipment maintenance management and is well received. In addition, the pressure control micromanometer is also developed for the gas used for CVD film formation. The exhaust fan frequency conversion control realizes the indispensable exhaust pressure control during the atmospheric pressure CVD film formation process to ensure stable operation for a long time.

Three years ago, as the exhaust gas treatment equipment equipped with continuous atmospheric CVD production equipment produced by Tengu Manufacturing Co., Ltd. (President: Yoshioka Shintaro, Head Office: Koshigaya City, Saitama, Japan), OEG provided ON Semiconductor KGT-3MM-AP ". The continuous operation of the equipment guarantees the stable production of CVD films. The pressure control method and the processing performance of harmful gases are praised by ON Semiconductor, and are adopted by the company's European plant again. Using this equipment can not only ensure the stability of the CVD film thickness of its European factories NSG * 8, PSG * 9, BPSG * 10, etc., but also promote the factory to increase production and reduce exhaust gas treatment costs.

OEG has been manufacturing exhaust gas treatment equipment for nearly 30 years, and has a wealth of performance in providing equipment for semiconductor and solar cell manufacturers in Japan and Taiwan. This is to provide equipment for European customers, and plans to explore the Southeast Asian market in the future.

KGT-3MM-AP specifications

【Explanation】

※ 1. CVD: (Chemical Vapor DeposiTIon, chemical vapor deposition) is a kind of deposition method, which produces thin films of various materials on the heating board.

※ 2. Power FET: (Power Field-Effect Transistor) is designed to handle large power MOSFET * 4. Compared with other power supply devices, its switching speed is fast and the conversion efficiency in the low voltage region is high, so it is mostly used for 200V or less Switching power supply, DC-DC converter, etc.

※ 3. IGBT: (Insulated Gate Bipolar Transistor) is a composite fully controlled voltage-driven power semiconductor device composed of BJT (bipolar transistor) and MOS (insulated gate field effect transistor). It combines the advantages of high input impedance of MOSFET and low on-voltage drop of GTR for current control.

※ 4. MOSFET: (Metal-Oxide-Semiconductor Field-Effect Transistor, metal oxide semiconductor transistor) is a kind of field effect transistor (FET), mostly using silicon dioxide material, mostly used in integrated circuits.

※ 5. Silane (SiH4): (silane, SiH4) molecular weight is 32.12, is a colorless odorous gas, is a representative of special gas used in semiconductor production.

※ 6. Phosphine (PH3): (phosphine, PH3) is a colorless, highly toxic, flammable gas and inorganic compound. It is the raw material of the mixed gas for semiconductor production. It is sometimes used for the production of n-type silicon InGaP (indium gallium phosphorous) semiconductor.

※ 7. Diborane (B2H6): (diborane, B2H6) is a boron hydride compound, a colorless odorous gas, and is an important semiconductor material. Mainly used for polymerization catalysts, reducing agents and rocket propellants. Flammable, explosive and highly toxic.

※ 8. NSG (None-doped Silicate Glass) film: Silica (SiO2) film that does not contain impurities such as phosphorus and boron.

※ 9. PSG (Phospho silicate glass) film: silicon oxide film containing phosphorus.

※ 10. BPSG (Boro-phospho silicate glass) film: silicon oxide film containing boron and phosphorus.

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