In recent years, a new two-dimensional material, borophene, has been successfully synthesized in experiments (Nat. Chem. 2016, 8 (6), 563-568; Science 2015, 350, 1513). Boron, a monoatomic boron layer, has a very rich structure. The boron olefin can be classified into an α phase, a β phase, a χ phase, and the like, depending on the coordination number of the boron atom. Unlike graphene, borene has special electronic and transport properties, such as superconductivity (theoretical prediction threshold temperature is about 20 K) and Dirac fermion. As the only single element two-dimensional metal material, boronene provides a good platform for studying the transport properties in two-dimensional metals. Article link: http:// 3 Mm /8 Mm Nano Tip,Electronic Board Marker Pen,Touch Board Marker Pens,Infared Smart Board Marker Shenzhen Ruidian Technology CO., Ltd , https://www.wisonens.com
Recently, Zhang Jin, Ph.D. student of the SF10 group of the Institute of Physics of the Chinese Academy of Sciences/Beijing National Center for Condensed Matter Physics, under the guidance of Professor Meng Sheng, Professor Feliciano Giustino of the University of Oxford, UK, Dr. Johannes Lischner of Imperial College of Technology, National Experiment of Los Alamos, USA Professor Sergei Tretiak and Dr. Zhou Liujiang collaborated to systematically study the intrinsic electron transport properties of three phases of boronene using electroacoustic coupling calculation method based on first principles. At room temperature, the resistivity of the β 12- phase boronene is about 3.52 μΩ*cm, which is an order of magnitude higher than the room temperature resistance (1.0 μΩ*cm) of the known best conductor, graphene.
More importantly, they found that the resistance of borene exhibits a peculiar uniform scaling law. At low temperatures (<100 K), the intrinsic resistance of boronene is proportional to the fourth power of the temperature; at high temperatures (>100 K), the intrinsic resistance of boronene is proportional to temperature (Figure 1). The transition temperature of borene of different structures and different electron concentrations is about 100K, and the transition temperature of graphene varies from 100 K to 900 K. These behaviors come from the strange fermi surface of the borax, that is, the large area electronic pocket, the small area electronic pocket and the cavity pocket coexist, which can be described by the Bloch-Grüneisen model. In addition, they also found that the resistance of borene is easily regulated by externally loaded carriers. The addition of holes can increase the resistance by more than four times (Figure 2). These findings have important reference value for the application of two-dimensional boron layers in future new electronics. Related research results are published on Angew. Chem. Int'l. Ed. (Zhang et al . Angew. Chem. Int'l. Ed. 2018, DOI: 10.1002/anie.201800087).
The research work was supported by the National Natural Science Foundation of China (Project Approval No. 11774396, 11474328 and 11290164), the Ministry of Science and Technology (Project Approval No. 2016YFA0300902 and 2015CB921001), the Chinese Academy of Sciences (XDB07000000) and the Beijing Municipal Science and Technology Commission (D161100002416003).
July 31, 2023